2N4416A
- Mfr.Part #
- 2N4416A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AF, TO-72-4 Metal Can
- Datasheet
- Download
- Description
- JFET
- Stock
- 24,523
- In Stock :
- 24,523
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - JFETs
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- O-MBCY-W4
- Operating Temperature :
- -65°C~200°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Wire
- Pin Count :
- 3
- Number of Terminations :
- 4
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 15mA
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Current - Drain (Idss) @ Vds (Vgs=0) :
- 5mA @ 15V
- Drain Current-Max (Abs) (ID) :
- 0.015A
- Voltage - Cutoff (VGS off) @ Id :
- 2.5V @ 1nA
- JESD-609 Code :
- e0
- Operating Mode :
- Depletion Mode
- Package / Case :
- TO-206AF, TO-72-4 Metal Can
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.21.00.75
- FET Technology :
- JUNCTION
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 4pF @ 15V
- Packaging :
- Bulk
- Feedback Cap-Max (Crss) :
- 1 pF
- Power Gain-Min (Gp) :
- 4dB
- Max Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 35V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY B
- Published :
- 2001
- Mount :
- Through Hole
- Factory Lead Time :
- 12 Weeks
- Drain to Source Breakdown Voltage :
- 35V
- Power Dissipation :
- 300mW
- FET Type :
- N-Channel
- Datasheets
- 2N4416A
2N4416A datasheet pdf and Transistors - JFETs product details from Central Semiconductor Corp stock available at
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