2N4116
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- Mfr.Part #
- 2N4116
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-3, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 26,161
- In Stock ：
- 26,161
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -
- Current - Collector (Ic) (Max) :
- 5 A
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A, 5V
- Package :
- Bulk
- Frequency - Transition :
- 70MHz
- Product Status :
- Active
- Transistor Type :
- -
- Supplier Device Package :
- TO-59
- Series :
- -
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Power - Max :
- 37 W
- Package / Case :
- TO-210AA, TO-59-3, Stud
- Mounting Type :
- Stud Mount
- Datasheets
- 2N4116
- - 10μA (ICBO) TO-210AA, TO-59-3, Stud Stud Mount
2N4116 Overview
This device has a DC current gain of 100 @ 2A, 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-59.Detection of Collector Emitter Breakdown at 80 V maximal voltage is present.
2N4116 Features
the DC current gain for this device is 100 @ 2A, 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the supplier device package of TO-59
2N4116 Applications
There are a lot of General Semiconductor
2N4116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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