2N4033

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Mfr.Part #
2N4033
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS PNP 80V 1A TO39
Stock
107
In Stock :
107

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Supplier Device Package :
TO-39 (TO-205AD)
Factory Lead Time :
12 Weeks
Packaging :
Bulk
Collector Base Voltage (VCBO) :
80V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
5V
Mount :
Through Hole
Power - Max :
800mW
RoHS Status :
Non-RoHS Compliant
Min Operating Temperature :
-55°C
Lifecycle Status :
IN PRODUCTION (Last Updated: 2 weeks ago)
Published :
2002
Collector Emitter Breakdown Voltage :
80V
Max Collector Current :
1A
Max Power Dissipation :
800mW
Transistor Type :
PNP
Mounting Type :
Through Hole
Polarity :
PNP
Number of Pins :
3
Package / Case :
TO-205AD, TO-39-3 Metal Can
Radiation Hardening :
No
Number of Elements :
1
Current - Collector Cutoff (Max) :
10μA ICBO
Current - Collector (Ic) (Max) :
1A
Power Dissipation :
800mW
Voltage - Collector Emitter Breakdown (Max) :
80V
Operating Temperature :
-55°C~200°C TJ
Max Operating Temperature :
200°C
Vce Saturation (Max) @ Ib, Ic :
1V @ 100mA, 1A
Collector Emitter Voltage (VCEO) :
80V
Datasheets
2N4033
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. 2N4033 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-205AD, TO-39-3 Metal Can, Operating Temperature:-55°C~200°C TJ, 2N4033 pinout, 2N4033 datasheet PDF, 2N4033 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. 2N4033 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. 2N4033


PNP -55°C~200°C TJ 10μA ICBO 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole

2N4033 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.TO-39 (TO-205AD) is the supplier device package for this product.This device displays a 80V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 1A volts.

2N4033 Features


the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of TO-39 (TO-205AD)


2N4033 Applications


There are a lot of Microsemi Corporation
2N4033 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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