2N3997
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- Mfr.Part #
- 2N3997
- Manufacturer
- Microchip Technology
- Package / Case
- TO-111-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 33,781
- In Stock ：
- 33,781
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Bulk
- Current - Collector (Ic) (Max) :
- 10 A
- Product Type :
- BJTs - Bipolar Transistors
- Series :
- -
- Product Status :
- Active
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 500mA, 5A
- Transistor Polarity :
- NPN
- RoHS :
- N
- Supplier Device Package :
- TO-111
- Package / Case :
- TO-111-4, Stud
- Frequency - Transition :
- -
- Technology :
- Si
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Product Category :
- Bipolar Transistors - BJT
- Brand :
- Microchip Technology
- Transistor Type :
- NPN
- Subcategory :
- Transistors
- Mounting Type :
- Stud Mount
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector Cutoff (Max) :
- 10μA
- Power - Max :
- 2 W
- Manufacturer :
- Microchip
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A, 2V
- Datasheets
- 2N3997
NPN -65°C ~ 200°C (TJ) 10μA TO-111-4, Stud Stud Mount
2N3997 Overview
DC current gain in this device equals 80 @ 1A, 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 500mA, 5A.Product comes in TO-111 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N3997 Features
the DC current gain for this device is 80 @ 1A, 2V
the vce saturation(Max) is 2V @ 500mA, 5A
the supplier device package of TO-111
2N3997 Applications
There are a lot of Microchip Technology
2N3997 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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