2N3906TFR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

250MHz

Length :

5.2mm

Polarity/Channel Type :

PNP

Pbfree Code :

yes

Radiation Hardening :

No

Number of Pins :

3

Published :

2007

Mounting Type :

Through Hole

JESD-609 Code :

e3

Height :

5.33mm

Current Rating :

-200mA

Max Breakdown Voltage :

40V

hFE Min :

100

Turn On Time-Max (ton) :

70ns

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Packaging :

Tape and Reel (TR)

Base Part Number :

2N3906

Number of Elements :

1

Collector Emitter Saturation Voltage :

-400mV

Collector Emitter Voltage (VCEO) :

40V

Collector Base Voltage (VCBO) :

-40V

Width :

4.19mm

Emitter Base Voltage (VEBO) :

-5V

REACH SVHC :

No SVHC

Mount :

Through Hole

Max Power Dissipation :

625mW

Power Dissipation :

625mW

Transistor Application :

SWITCHING

Max Collector Current :

200mA

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

40V

Element Configuration :

Single

Gain Bandwidth Product :

250MHz

Number of Terminations :

3

Transition Frequency :

250MHz

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-40V

ECCN Code :

EAR99

Transistor Type :

PNP

Contact Plating :

Tin

Lead Free :

Lead Free

Weight :

240mg

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Position :

BOTTOM

Factory Lead Time :

6 Weeks