2N3906TAR
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- Mfr.Part #
- 2N3906TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 14,310
- In Stock ：
- 14,310
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn On Time-Max (ton) :
- 70ns
- Published :
- 2008
- Height :
- 5.33mm
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 240mg
- Max Collector Current :
- 200mA
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- -40V
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -200mA
- Mounting Type :
- Through Hole
- Base Part Number :
- 2N3906
- Length :
- 5.2mm
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Radiation Hardening :
- No
- Width :
- 4.19mm
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -40V
- Transition Frequency :
- 250MHz
- Packaging :
- Tape and Box (TB)
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -250mV
- Gain Bandwidth Product :
- 250MHz
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Frequency :
- 250MHz
- hFE Min :
- 100
- Mount :
- Through Hole
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Max Power Dissipation :
- 625mW
- Max Breakdown Voltage :
- 40V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 40V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power Dissipation :
- 625mW
- Datasheets
- 2N3906TAR
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3906TAR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
2N3906TAR Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TAR Applications
There are a lot of ON Semiconductor
2N3906TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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