2N3906TA
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- Mfr.Part #
- 2N3906TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 1,688
- In Stock ：
- 1,688
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 250MHz
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Width :
- 4.19mm
- Published :
- 2007
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- REACH SVHC :
- No SVHC
- Turn On Time-Max (ton) :
- 70ns
- Base Part Number :
- 2N3906
- Length :
- 5.2mm
- Collector Emitter Saturation Voltage :
- -250mV
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 250MHz
- Transistor Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- -200mA
- Max Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- -40V
- Mount :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Radiation Hardening :
- No
- Height :
- 5.33mm
- Weight :
- 240mg
- hFE Min :
- 100
- Max Power Dissipation :
- 625mW
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 200mA
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Frequency :
- 250MHz
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Voltage - Rated DC :
- -40V
- Number of Elements :
- 1
- Datasheets
- 2N3906TA
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3906TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
2N3906TA Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TA Applications
There are a lot of ON Semiconductor
2N3906TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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