2N3904RL1G
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- Mfr.Part #
- 2N3904RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A TO92
- Stock
- 25,797
- In Stock ：
- 25,797
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 300mV
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Current Rating :
- 200mA
- hFE Min :
- 40
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 40V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Element Configuration :
- Single
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Turn On Time-Max (ton) :
- 70ns
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 300MHz
- Additional Feature :
- EUROPEAN PART NUMBER
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 40V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 625mW
- Base Part Number :
- 2N3904
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Power Dissipation :
- 625mW
- Max Collector Current :
- 200mA
- Collector Emitter Voltage (VCEO) :
- 40V
- Frequency :
- 300MHz
- Mount :
- Through Hole
- Turn Off Time-Max (toff) :
- 250ns
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 300MHz
- Datasheets
- 2N3904RL1G
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N3904RL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
2N3904RL1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904RL1G Applications
There are a lot of ON Semiconductor
2N3904RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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