2N3637L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Wire

Configuration :

Single

Max Power Dissipation :

1W

Transistor Type :

PNP

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 50mA

Number of Pins :

3

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Max Collector Current :

1A

Packaging :

Bulk

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-65°C~200°C TJ

Power - Max :

1W

Package / Case :

TO-205AA, TO-5-3 Metal Can

Terminal Finish :

TIN LEAD

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

175V

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 50mA 10V

Number of Terminations :

3

Transistor Element Material :

SILICON

Pbfree Code :

No

Terminal Position :

BOTTOM

Collector Emitter Voltage (VCEO) :

140V

ECCN Code :

EAR99

Number of Elements :

1

JESD-609 Code :

e0

Published :

2010

Mount :

Through Hole

Current - Collector Cutoff (Max) :

10μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.95