2N2907AP
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- Mfr.Part #
- 2N2907AP
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 28,953
- In Stock ：
- 28,953
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency - Transition :
- 200MHz
- Terminal Form :
- Wire
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Terminal Position :
- BOTTOM
- Turn On Time-Max (ton) :
- 45ns
- Power - Max :
- 400mW
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 200MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 20 Weeks
- Power Dissipation-Max (Abs) :
- 0.4W
- Turn Off Time-Max (toff) :
- 100ns
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Transistor Type :
- PNP
- JESD-30 Code :
- O-MBCY-W3
- Terminal Finish :
- MATTE TIN OVER NICKEL
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Current - Collector (Ic) (Max) :
- 600mA
- Datasheets
- 2N2907AP
PNP -65°C~200°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2907A PBFREE Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 200MHz.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.
2N2907A PBFREE Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz
2N2907A PBFREE Applications
There are a lot of Central Semiconductor Corp
2N2907A PBFREE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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