2N2369AUB

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Mfr.Part #
2N2369AUB
Manufacturer
Microchip Technology
Package / Case
4-SMD
Datasheet
Download
Description
TRANS NPN 20V SMD
Stock
15,514
In Stock :
15,514

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Mount :
Surface Mount
Max Collector Current :
400nA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-65°C~200°C TJ
Emitter Base Voltage (VEBO) :
4.5V
Max Power Dissipation :
360mW
Collector Emitter Voltage (VCEO) :
15V
Factory Lead Time :
22 Weeks
Published :
2004
Power Dissipation :
360mW
JESD-609 Code :
e0
Pin Count :
3
Packaging :
Bulk
Number of Elements :
1
ECCN Code :
EAR99
Radiation Hardening :
No
Terminal Finish :
TIN LEAD
Package / Case :
4-SMD
Transistor Application :
SWITCHING
Number of Pins :
3
Transistor Type :
NPN
Configuration :
Single
Number of Terminations :
3
Transistor Element Material :
SILICON
RoHS Status :
Non-RoHS Compliant
Mounting Type :
Surface Mount
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Collector Emitter Breakdown Voltage :
15V
Terminal Position :
Dual
Collector Base Voltage (VCBO) :
40V
Vce Saturation (Max) @ Ib, Ic :
450mV @ 10mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 100mA 1V
Polarity/Channel Type :
NPN
Pbfree Code :
No
Datasheets
2N2369AUB
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N2369AUB from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Package / Case:4-SMD, Number of Pins:3, Number of Terminations:3, Mounting Type:Surface Mount, 2N2369AUB pinout, 2N2369AUB datasheet PDF, 2N2369AUB amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N2369AUB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN 4-SMD Bulk Surface Mount

2N2369AUB Overview


DC current gain in this device equals 20 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4.5V to gain high efficiency.In extreme cases, the collector current can be as low as 400nA volts.

2N2369AUB Features


the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V


2N2369AUB Applications


There are a lot of Microsemi Corporation
2N2369AUB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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