2N2369A

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Collector-Base Capacitance-Max :

4pF

Packaging :

Bulk

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

Case Connection :

COLLECTOR

Emitter Base Voltage (VEBO) :

4.5V

Contact Plating :

Lead, Tin

Max Power Dissipation :

360mW

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

15V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 1V

Number of Pins :

3

Collector Base Voltage (VCBO) :

40V

Terminal Finish :

TIN LEAD

Number of Elements :

1

JESD-609 Code :

e0

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

VCEsat-Max :

0.45 V

Pin Count :

3

Terminal Form :

Wire

Lead Free :

Contains Lead

Transition Frequency :

500MHz

Package / Case :

TO-206AA, TO-18-3 Metal Can

Radiation Hardening :

No

Mount :

Through Hole

Power Dissipation :

360mW

Published :

2002

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Transistor Type :

NPN

ECCN Code :

EAR99

Configuration :

Single

Collector Emitter Breakdown Voltage :

15V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Factory Lead Time :

12 Weeks

Operating Temperature :

-65°C~200°C TJ

Max Collector Current :

400nA

Polarity/Channel Type :

NPN

Number of Terminations :

3