2N2369A

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Bulk

Terminal Form :

Wire

Terminal Finish :

TIN LEAD

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

15V

Contact Plating :

Lead, Tin

Pbfree Code :

No

Collector-Base Capacitance-Max :

4pF

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

VCEsat-Max :

0.45 V

Number of Terminations :

3

Transistor Application :

SWITCHING

Max Power Dissipation :

360mW

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Mount :

Through Hole

Package / Case :

TO-206AA, TO-18-3 Metal Can

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 1V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

15V

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Power Dissipation :

360mW

Number of Elements :

1

Number of Pins :

3

Lead Free :

Contains Lead

Emitter Base Voltage (VEBO) :

4.5V

Transistor Type :

NPN

Max Collector Current :

400nA

Case Connection :

COLLECTOR

Operating Temperature :

-65°C~200°C TJ

Published :

2002

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Pin Count :

3

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

40V

Configuration :

Single

Transition Frequency :

500MHz