2N2369A

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Bulk

VCEsat-Max :

0.45 V

Contact Plating :

Lead, Tin

Max Power Dissipation :

360mW

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

15V

Collector Emitter Voltage (VCEO) :

15V

Transistor Application :

SWITCHING

Configuration :

Single

Factory Lead Time :

12 Weeks

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

Case Connection :

COLLECTOR

Terminal Form :

Wire

Package / Case :

TO-206AA, TO-18-3 Metal Can

Terminal Finish :

TIN LEAD

Collector-Base Capacitance-Max :

4pF

Number of Terminations :

3

Transistor Type :

NPN

RoHS Status :

Non-RoHS Compliant

Mount :

Through Hole

Number of Elements :

1

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Pin Count :

3

Collector Base Voltage (VCBO) :

40V

Published :

2002

ECCN Code :

EAR99

Power Dissipation :

360mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 1V

Lead Free :

Contains Lead

Operating Temperature :

-65°C~200°C TJ

Max Collector Current :

400nA

Number of Pins :

3

Transition Frequency :

500MHz

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

4.5V