2N2369

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Pin Count :

3

Configuration :

Single

Published :

2002

Number of Terminations :

3

Pbfree Code :

No

Power Dissipation :

360mW

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

Transistor Type :

NPN

Case Connection :

COLLECTOR

Contact Plating :

Lead, Tin

Package / Case :

TO-206AA, TO-18-3 Metal Can

Max Collector Current :

400nA

Lead Free :

Contains Lead

ECCN Code :

EAR99

JESD-609 Code :

e0

VCEsat-Max :

0.45 V

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

15V

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Max Power Dissipation :

360mW

Transition Frequency :

500MHz

Terminal Finish :

TIN LEAD

Number of Pins :

3

Collector Emitter Breakdown Voltage :

15V

Packaging :

Bulk

Operating Temperature :

-65°C~200°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 1V

Emitter Base Voltage (VEBO) :

4.5V

Transistor Element Material :

SILICON

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Number of Elements :

1

Collector Base Voltage (VCBO) :

40V

Collector-Base Capacitance-Max :

4pF

Polarity/Channel Type :

NPN

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Wire

RoHS Status :

Non-RoHS Compliant