2EDL23N06PJXUMA1
- Mfr.Part #
- 2EDL23N06PJXUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 14-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 14DSO
- Stock
- 6,259
- In Stock :
- 6,259
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Terminal Finish :
- Tin (Sn)
- Rise / Fall Time (Typ) :
- 48ns 37ns
- Number of Outputs :
- 2
- Series :
- EiceDRIVER™
- Voltage - Supply :
- 10V~17.5V
- Terminal Form :
- Gull wing
- Max Supply Current :
- 300mA
- Supply Voltage :
- 15V
- Input Type :
- Non-Inverting
- Power Supplies :
- 15V
- Published :
- 2006
- Package / Case :
- 14-SOIC (0.154, 3.90mm Width)
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 18 Weeks
- Ambient Temperature Range High :
- 105°C
- High Side Voltage - Max (Bootstrap) :
- 600V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 14
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 37 ns
- Propagation Delay :
- 310 ns
- Driven Configuration :
- Half-Bridge
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 48 ns
- Output Current :
- 2.3A
- REACH SVHC :
- No SVHC
- Height :
- 1.75mm
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 37 ns
- ECCN Code :
- EAR99
- Logic Voltage - VIL, VIH :
- 1.1V 1.7V
- Max Output Current :
- 2.3A
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Channel Type :
- Independent
- Max Junction Temperature (Tj) :
- 150°C
- Operating Temperature :
- -40°C~150°C TJ
- Max Power Dissipation :
- 900mW
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 14
- Halogen Free :
- Halogen Free
- Rise Time :
- 48ns
- Gate Type :
- N-Channel, P-Channel MOSFET
- Current - Peak Output (Source, Sink) :
- 1.8A 2.3A
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Datasheets
- 2EDL23N06PJXUMA1

Gate Drivers Infineon Technologies 2EDL23N06PJXUMA1 Overview
Introducing the cutting-edge Gate Driver IC, meticulously crafted by Infineon Technologies, the leader in semiconductor solutions. The 2EDL23N06PJXUMA1 Gate Driver stands as a testament to precision engineering and innovation, delivering unparalleled performance in driving half-bridge configurations.
Designed with utmost sophistication, this IC Gate Driver empowers your systems with seamless control and efficiency, ensuring optimal operation in diverse applications. From industrial automation to renewable energy systems, trust Infineon Technologies to elevate your projects to new heights of success.
2EDL23N06PJXUMA1 Features
- Robust Half-Bridge Configuration: Enables efficient driving of half-bridge configurations, enhancing system performance.
- Precision Control: Delivers precise control signals, ensuring accurate operation in critical applications.
- Highly Integrated Design: Compact and integrated construction for simplified system integration and space-saving benefits.
- Enhanced Reliability: Built to withstand harsh operating conditions, guaranteeing long-term reliability and durability.
- Advanced Protection Features: Incorporates comprehensive protection mechanisms to safeguard against overcurrent, overvoltage, and overheating.
2EDL23N06PJXUMA1 Applications
- Industrial Automation: Implement the 2EDL23N06PJXUMA1 in industrial motor control systems, ensuring precise and efficient operation in manufacturing processes, robotics, and machinery.
- Renewable Energy Systems: Integrate this Gate Driver into renewable energy inverters for solar and wind power applications, optimizing energy conversion efficiency and reliability.
- Electric Vehicle (EV) Charging: Utilize the 2EDL23N06PJXUMA1 in EV charging stations to drive power conversion stages, facilitating fast and reliable charging for electric vehicles.
- Switched-Mode Power Supplies (SMPS): Incorporate this IC into SMPS designs for efficient power delivery in telecommunications, data centers, and consumer electronics.
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