2DC4617QLP-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Published :

2015

JESD-609 Code :

e4

Additional Feature :

High Reliability

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Power Dissipation :

250mW

Collector Emitter Breakdown Voltage :

50V

Polarity :

PNP

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

hFE Min :

120

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Element Configuration :

Single

Transistor Element Material :

SILICON

Mount :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Elements :

1

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

50V

Length :

1mm

Transistor Type :

NPN

Height :

470μm

Terminal Position :

BOTTOM

Transition Frequency :

100MHz

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Width :

600μm

Factory Lead Time :

19 Weeks

Pin Count :

3

Number of Terminations :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

3-UFDFN

REACH SVHC :

No SVHC

Number of Pins :

3

Case Connection :

COLLECTOR

Max Power Dissipation :

250mW

Gain Bandwidth Product :

100MHz

Base Part Number :

2DC4617