1PS66SB82115

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Arrays

Peak Reverse Current :

200nA

Voltage - Forward (Vf) (Max) @ If :

700mV @ 30mA

Max Operating Temperature :

125°C

Speed :

Small Signal =< 200mA (Io), Any Speed

Number of Elements :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

JESD-609 Code :

e3

Application :

GENERAL PURPOSE

Terminal Position :

Dual

Diode Configuration :

3 Independent

Published :

2009

Mounting Type :

Surface Mount

Max Reverse Leakage Current :

200nA

Forward Voltage :

700mV

Max Reverse Voltage (DC) :

15V

Reverse Test Voltage :

1V

Min Operating Temperature :

-65°C

Diode Element Material :

SILICON

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Forward Current :

30mA

Mount :

Surface Mount

Current - Average Rectified (Io) :

30mA DC

Average Rectified Current :

30mA

Base Part Number :

1PS66SB82

Factory Lead Time :

4 Weeks

HTS Code :

8541.10.00.70

Diode Type :

Schottky

Contact Plating :

Tin

Max Repetitive Reverse Voltage (Vrrm) :

15V

Current - Reverse Leakage @ Vr :

200nA @ 1V

Number of Terminations :

6

Pin Count :

6

Output Current-Max :

0.03A

Number of Phases :

1

Operating Temperature - Junction :

125°C Max

Number of Pins :

6

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)