1N5830R

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Mfr.Part #
1N5830R
Manufacturer
GeneSiC Semiconductor
Package / Case
DO-203AA, DO-4, Stud
Datasheet
Download
Description
DIODE SCHOTTKY REV 25V DO4
Stock
1,172
In Stock :
1,172

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Manufacturer :
GeneSiC Semiconductor
Product Category :
Diodes - Rectifiers - Single
Terminal Position :
UPPER
Operating Temperature - Junction :
-55°C~150°C
JESD-30 Code :
O-MUPM-D1
Number of Elements :
1
Forward Current :
25A
Average Rectified Current :
25A
Pbfree Code :
yes
Min Operating Temperature :
-55°C
Case Connection :
ANODE
Peak Reverse Current :
1A
Package / Case :
DO-203AA, DO-4, Stud
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Natural Thermal Resistance :
1.8 °C/W
Current - Reverse Leakage @ Vr :
2mA @ 20V
Number of Phases :
1
Mount :
Chassis, Stud
RoHS Status :
RoHS Compliant
Max Operating Temperature :
150°C
HTS Code :
8541.10.00.80
Mounting Type :
Chassis, Stud Mount
Number of Terminations :
1
Diode Type :
Schottky, Reverse Polarity
Terminal Form :
Solder Lug
Application :
Power
ECCN Code :
EAR99
Max Reverse Voltage (DC) :
25V
Base Part Number :
1N5830R
Max Reverse Leakage Current :
1μA
Factory Lead Time :
10 Weeks
Max Surge Current :
400A
Lifecycle Status :
Production (Last Updated: 5 months ago)
Published :
2013
Diode Element Material :
SILICON
Voltage - Forward (Vf) (Max) @ If :
580mV @ 25A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Max Repetitive Reverse Voltage (Vrrm) :
25V
Packaging :
Bulk
Configuration :
Single
Datasheets
1N5830R
Introducing Diodes - Rectifiers - Single GeneSiC Semiconductor 1N5830R from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:DO-203AA, DO-4, Stud, Mounting Type:Chassis, Stud Mount, Number of Terminations:1, Base Part Number:1N5830R, 1N5830R pinout, 1N5830R datasheet PDF, 1N5830R amp .Beyond Diodes - Rectifiers - Single GeneSiC Semiconductor 1N5830R ,we also offer BAT54,235, BAT54,215, BAS16L,315, Our vast inventory has you covered. Contact us now for immediate solutions.



Schottky, Reverse Polarity Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 580mV @ 25A -55°C~150°C 2mA @ 20V 1-Termination Bulk DO-203AA, DO-4, Stud Chassis, Stud Mount

1N5830R Overview


A maximum reverse leakage current of 1μA volts is produced by this device.This device has an average rectified current of 25A volts.Forward current is allowed to reach a value of zero.An object's thermal resistance is a measure of its ability to resist a heat flow, and its natural thermal resistance is 1.8 °C/W °C.Surge currents can be used up to 400A.Datasheets indicate that the peak reverse is 1A.

1N5830R Features


a maximal reverse leakage current of 1μA volts
an average rectified current of 25A volts
the peak reverse is 1A


1N5830R Applications


There are a lot of GeneSiC Semiconductor
1N5830R applications of single-phase diode rectifier.


  • DC motor control and drives
  • Battery chargers
  • Welders
  • Power converters
  • Reverse Polarity Protection
  • Ultra High-Speed Switching
  • Freewheeling
  • Polarity Protection Diode
  • Recirculating Diode
  • Switching Diode
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