1N5829

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Single

Number of Terminations :

1

Published :

2013

Diode Element Material :

SILICON

Voltage - Forward (Vf) (Max) @ If :

580mV @ 25A

Package / Case :

DO-203AA, DO-4, Stud

Diode Type :

Schottky

Current - Reverse Leakage @ Vr :

2mA @ 20V

Max Repetitive Reverse Voltage (Vrrm) :

20V

Pbfree Code :

yes

Mount :

Chassis, Stud

Max Reverse Voltage (DC) :

20V

Number of Elements :

1

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

O-MUPM-D1

Factory Lead Time :

10 Weeks

REACH SVHC :

No SVHC

Peak Reverse Current :

1A

Max Surge Current :

400A

RoHS Status :

RoHS Compliant

Max Reverse Leakage Current :

1μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

CATHODE

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Natural Thermal Resistance :

1.8 °C/W

Base Part Number :

1N5829

Mounting Type :

Chassis, Stud Mount

Min Operating Temperature :

-55°C

Element Configuration :

Single

Max Operating Temperature :

150°C

Number of Phases :

1

Forward Current :

25A

Terminal Position :

UPPER

Forward Voltage :

580mV

Lifecycle Status :

Production (Last Updated: 5 months ago)

Application :

Power

Terminal Form :

Solder Lug

Operating Temperature - Junction :

-55°C~150°C

Average Rectified Current :

25A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED