1N5809

Manufacturer :

Solid State Inc.

Product Category :

Diodes - Rectifiers - Single

Output Current-Max :

3A

Peak Reverse Current :

5μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin/Lead (Sn/Pb)

Capacitance @ Vr, F :

60pF @ 10V 1MHz

Published :

1997

Min Operating Temperature :

-65°C

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Diode Type :

Standard

Forward Voltage :

875mV

Radiation Hardening :

yes

Pbfree Code :

No

Lead Free :

Contains Lead

Peak Non-Repetitive Surge Current :

125A

JESD-609 Code :

e0

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Diode Element Material :

SILICON

HTS Code :

8541.10.00.80

Case Connection :

Isolated

Operating Temperature - Junction :

-65°C~175°C

Number of Phases :

1

Max Repetitive Reverse Voltage (Vrrm) :

100V

Mounting Type :

Through Hole

Package / Case :

B, Axial

Application :

ULTRA FAST RECOVERY

Max Reverse Voltage (DC) :

100V

Mount :

Through Hole

Forward Current :

6A

Terminal Form :

Wire

Element Configuration :

Single

Reverse Recovery Time :

30 ns

Voltage - Forward (Vf) (Max) @ If :

875mV @ 4A

Pin Count :

2

Packaging :

Bulk

Max Operating Temperature :

175°C

Number of Terminations :

2

Contact Plating :

Lead, Tin

Current - Reverse Leakage @ Vr :

5µA @ 100V

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Average Rectified Current :

3A

RoHS Status :

Non-RoHS Compliant

Number of Pins :

2

Reach Compliance Code :

not_compliant

Additional Feature :

HIGH RELIABILITY, METALLURGICALLY BONDED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

7 Weeks