1N5610

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Mfr.Part #
1N5610
Manufacturer
Microchip Technology
Package / Case
G, Axial
Datasheet
Download
Description
TVS DIODE 30.5VWM 47.6VC G AXIAL
Stock
49,561
In Stock :
49,561

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Manufacturer :
Microchip Technology
Product Category :
Peak Pulse Current :
32 A
Polarity :
Unidirectional
Diode Type :
TRANS VOLTAGE SUPPRESSOR DIODE
Min Breakdown Voltage :
33 V
Mount :
Through Hole
Breakdown Voltage-Min :
33 V
Supplier Device Package :
G, Axial
Number of Terminals :
2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Rep Pk Reverse Voltage-Max :
30.5 V
Reach Compliance Code :
Unknown
Non-rep Peak Rev Power Dis-Max :
1500 W
Max Operating Temperature :
175 °C
Number of Elements :
1
Package Shape :
Round
Direction :
Unidirectional
Lifecycle Status :
Production (Last Updated: 2 months ago)
RoHS :
Compliant
Voltage - Clamping (Max) @ Ipp :
47.6V
Schedule B :
8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/85
Package :
Bulk
HTS Code :
8541.10.00.50
Reverse Standoff Voltage :
30.5 V
JESD-609 Code :
e0
Voltage - Breakdown (Min) :
33V
Terminal Form :
Wire
Package / Case :
G, Axial
Min Operating Temperature :
-55 °C
Voltage - Reverse Standoff (Typ) :
30.5V
Power Line Protection :
No
Clamping Voltage :
47.6 V
Surface Mount :
No
Operating Temperature :
-55°C ~ 175°C (TJ)
Radiation Hardening :
yes
Type :
Zener
Leakage Current :
5 µA
Capacitance @ Frequency :
-
Terminal Finish :
Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
Reverse Breakdown Voltage :
33 V
Number of Pins :
2
Pbfree Code :
No
Additional Feature :
HIGH RELIABILITY, METALLURGICALLY BONDED
Series :
-
Unidirectional Channels :
1
Applications :
GENERAL PURPOSE
Mounting Type :
Through Hole
Element Configuration :
Single
JESD-30 Code :
O-LALF-W2
Terminal Position :
Axial
Product Status :
Discontinued at Digi-Key
Power - Peak Pulse :
1500W (1.5kW)
Test Current :
1 mA
Diode Element Material :
SILICON
Pin Count :
2
Max Reverse Leakage Current :
5 µA
Power Dissipation-Max :
3 W
Case Connection :
Isolated
ECCN Code :
EAR99
Peak Pulse Power :
1.5 kW
Configuration :
Single
Datasheets
1N5610
Introducing Microchip Technology 1N5610 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:G, Axial, Operating Temperature:-55°C ~ 175°C (TJ), Type:Zener, Number of Pins:2, Mounting Type:Through Hole, 1N5610 pinout, 1N5610 datasheet PDF, 1N5610 amp .Beyond Microchip Technology 1N5610 ,we also offer F9TYP5E5EANF093, F9TYP5E5EANF094, F9TYP5E5EANF095, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 1N5610


1N5610 datasheet pdf and TVS - Diodes product details from Microchip stock available at Xinshop

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