1N4150TR

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Single

JESD-609 Code :

e2

Current - Average Rectified (Io) :

300mA DC

Reverse Recovery Time :

4 ns

HTS Code :

8541.10.00.70

Radiation Hardening :

No

Max Reverse Leakage Current :

100nA

Max Forward Surge Current (Ifsm) :

4A

Peak Non-Repetitive Surge Current :

4A

Number of Elements :

1

Lead Free :

Lead Free

Max Repetitive Reverse Voltage (Vrrm) :

50V

Base Part Number :

1N4150

Capacitance @ Vr, F :

2.5pF @ 0V 1MHz

Packaging :

Tape and Reel (TR)

Current - Reverse Leakage @ Vr :

100nA @ 50V

Max Operating Temperature :

175°C

Diode Type :

Standard

Forward Voltage :

1V

Recovery Time :

4 ns

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin/Silver (Sn/Ag)

Mounting Type :

Through Hole

Number of Terminations :

2

Mount :

Through Hole

Min Operating Temperature :

-65°C

Element Configuration :

Single

Output Current-Max :

0.15A

REACH SVHC :

Unknown

Factory Lead Time :

11 Weeks

Max Surge Current :

4A

Published :

2013

Diode Element Material :

SILICON

Max Reverse Voltage (DC) :

50V

Power Dissipation :

500mW

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Forward Current :

150mA

Peak Reverse Current :

100nA

ECCN Code :

EAR99

Terminal Form :

Wire

Package / Case :

DO-204AH, DO-35, Axial

Operating Temperature - Junction :

175°C Max

Current Rating :

200mA

Average Rectified Current :

300mA

Number of Pins :

2

Voltage - Forward (Vf) (Max) @ If :

1V @ 200mA