ZXTEM322TA

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Mfr.Part #
ZXTEM322TA
Manufacturer
Diodes Incorporated
Package / Case
3-PowerSMD, Flat Leads
Datasheet
Download
Description
TRANS NPN 80V 3.5A 3MLP/DFN
Stock
19,076
In Stock :
19,076

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
80V
Length :
2mm
Qualification Status :
Not Qualified
Max Power Dissipation :
3W
Pin Count :
5
Terminal Position :
Dual
Number of Pins :
322
Width :
2mm
Packaging :
Tape and Reel (TR)
Height :
1mm
Transistor Type :
NPN
Voltage - Rated DC :
80V
JESD-30 Code :
S-PDSO-F3
Transistor Application :
SWITCHING
Max Collector Current :
3.5A
Case Connection :
COLLECTOR
Current Rating :
3.5A
Polarity/Channel Type :
NPN
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 200mA 2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
Power Dissipation :
3W
RoHS Status :
ROHS3 Compliant
Max Breakdown Voltage :
80V
Current - Collector Cutoff (Max) :
25nA
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Transition Frequency :
160MHz
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
325mV @ 300mA, 3.5A
Element Configuration :
Single
Mount :
Surface Mount
Published :
2006
Base Part Number :
ZXTEM322
Collector Emitter Voltage (VCEO) :
80V
Number of Terminations :
3
Emitter Base Voltage (VEBO) :
7.5V
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
40
Lead Free :
Lead Free
Frequency :
160MHz
Gain Bandwidth Product :
160MHz
Package / Case :
3-PowerSMD, Flat Leads
Collector Base Voltage (VCBO) :
100V
Datasheets
ZXTEM322TA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTEM322TA from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:322, Operating Temperature:-55°C~150°C TJ, Base Part Number:ZXTEM322, Number of Terminations:3, Mounting Type:Surface Mount, Package / Case:3-PowerSMD, Flat Leads, ZXTEM322TA pinout, ZXTEM322TA datasheet PDF, ZXTEM322TA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTEM322TA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTEM322TA


NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-PowerSMD, Flat Leads Tape & Reel (TR) Surface Mount

ZXTEM322TA Overview


This device has a DC current gain of 300 @ 200mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 325mV @ 300mA, 3.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7.5V.This device has a current rating of 3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 160MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 3.5A volts is possible.

ZXTEM322TA Features


the DC current gain for this device is 300 @ 200mA 2V
the vce saturation(Max) is 325mV @ 300mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 3.5A
a transition frequency of 160MHz


ZXTEM322TA Applications


There are a lot of Diodes Incorporated
ZXTEM322TA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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