ZXTEM322TA
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- Mfr.Part #
- ZXTEM322TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-PowerSMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 80V 3.5A 3MLP/DFN
- Stock
- 19,076
- In Stock ：
- 19,076
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Length :
- 2mm
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- 3-PowerSMD, Flat Leads
- Emitter Base Voltage (VEBO) :
- 7.5V
- Max Collector Current :
- 3.5A
- Width :
- 2mm
- Current - Collector Cutoff (Max) :
- 25nA
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 80V
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 325mV @ 300mA, 3.5A
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 3.5A
- Power Dissipation :
- 3W
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 2V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Height :
- 1mm
- Pin Count :
- 5
- JESD-30 Code :
- S-PDSO-F3
- Transition Frequency :
- 160MHz
- Max Breakdown Voltage :
- 80V
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 3W
- Number of Pins :
- 322
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 160MHz
- Base Part Number :
- ZXTEM322
- Qualification Status :
- Not Qualified
- Frequency :
- 160MHz
- Datasheets
- ZXTEM322TA
ZXTEM322TA Documents
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-PowerSMD, Flat Leads Tape & Reel (TR) Surface Mount
ZXTEM322TA Overview
This device has a DC current gain of 300 @ 200mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 325mV @ 300mA, 3.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7.5V.This device has a current rating of 3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 160MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 3.5A volts is possible.
ZXTEM322TA Features
the DC current gain for this device is 300 @ 200mA 2V
the vce saturation(Max) is 325mV @ 300mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 3.5A
a transition frequency of 160MHz
ZXTEM322TA Applications
There are a lot of Diodes Incorporated
ZXTEM322TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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