ZXTEM322TA
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- Mfr.Part #
- ZXTEM322TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-PowerSMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 80V 3.5A 3MLP/DFN
- Stock
- 19,076
- In Stock ：
- 19,076
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Length :
- 2mm
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 3W
- Pin Count :
- 5
- Terminal Position :
- Dual
- Number of Pins :
- 322
- Width :
- 2mm
- Packaging :
- Tape and Reel (TR)
- Height :
- 1mm
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 80V
- JESD-30 Code :
- S-PDSO-F3
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 3.5A
- Case Connection :
- COLLECTOR
- Current Rating :
- 3.5A
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 3W
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 25nA
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 160MHz
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 325mV @ 300mA, 3.5A
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Published :
- 2006
- Base Part Number :
- ZXTEM322
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 7.5V
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Frequency :
- 160MHz
- Gain Bandwidth Product :
- 160MHz
- Package / Case :
- 3-PowerSMD, Flat Leads
- Collector Base Voltage (VCBO) :
- 100V
- Datasheets
- ZXTEM322TA
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-PowerSMD, Flat Leads Tape & Reel (TR) Surface Mount
ZXTEM322TA Overview
This device has a DC current gain of 300 @ 200mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 325mV @ 300mA, 3.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7.5V.This device has a current rating of 3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 160MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 3.5A volts is possible.
ZXTEM322TA Features
the DC current gain for this device is 300 @ 200mA 2V
the vce saturation(Max) is 325mV @ 300mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 3.5A
a transition frequency of 160MHz
ZXTEM322TA Applications
There are a lot of Diodes Incorporated
ZXTEM322TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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