ZXTEM322TA
- Mfr.Part #
- ZXTEM322TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-PowerSMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 80V 3.5A 3MLP/DFN
- Stock
- 19,076
- In Stock :
- 19,076
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 25nA
- Pin Count :
- 5
- Current Rating :
- 3.5A
- Voltage - Rated DC :
- 80V
- Length :
- 2mm
- Polarity/Channel Type :
- NPN
- Height :
- 1mm
- Transistor Application :
- SWITCHING
- Package / Case :
- 3-PowerSMD, Flat Leads
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 160MHz
- Max Collector Current :
- 3.5A
- Terminal Position :
- Dual
- Base Part Number :
- ZXTEM322
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 2V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 325mV @ 300mA, 3.5A
- Width :
- 2mm
- Transition Frequency :
- 160MHz
- Number of Pins :
- 322
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7.5V
- Published :
- 2006
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Type :
- NPN
- Power Dissipation :
- 3W
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Finish :
- Matte Tin (Sn)
- Qualification Status :
- Not Qualified
- Frequency :
- 160MHz
- JESD-30 Code :
- S-PDSO-F3
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 3W
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 80V
- Datasheets
- ZXTEM322TA
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-PowerSMD, Flat Leads Tape & Reel (TR) Surface Mount
ZXTEM322TA Overview
This device has a DC current gain of 300 @ 200mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 325mV @ 300mA, 3.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7.5V.This device has a current rating of 3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 160MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 3.5A volts is possible.
ZXTEM322TA Features
the DC current gain for this device is 300 @ 200mA 2V
the vce saturation(Max) is 325mV @ 300mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 3.5A
a transition frequency of 160MHz
ZXTEM322TA Applications
There are a lot of Diodes Incorporated
ZXTEM322TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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