VBT2080C-E3/4W
- Mfr.Part #
- VBT2080C-E3/4W
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- DIODE ARRAY SCHOTTKY 80V TO263AB
- Stock
- 35,234
- In Stock :
- 35,234
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- Manufacturer :
- Vishay
- Product Category :
- Diodes - Rectifiers - Arrays
- Application :
- EFFICIENCY
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Diode Configuration :
- 1 Pair Common Cathode
- ECCN Code :
- EAR99
- Max Reverse Voltage (DC) :
- 80V
- Series :
- TMBS®
- Pin Count :
- 3
- Min Operating Temperature :
- -55°C
- Terminal Position :
- Single
- Number of Phases :
- 1
- Mounting Type :
- Surface Mount
- Average Rectified Current :
- 10A
- Additional Feature :
- FREE WHEELING DIODE, LOW POWER LOSS
- Terminal Form :
- Gull wing
- Forward Voltage :
- 670mV
- Element Configuration :
- Common Cathode
- Number of Pins :
- 3
- Weight :
- 1.379998g
- Diode Type :
- Schottky
- Current - Reverse Leakage @ Vr :
- 600μA @ 80V
- JESD-30 Code :
- R-PSSO-G2
- Diode Element Material :
- SILICON
- Forward Current :
- 20A
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- HTS Code :
- 8541.10.00.80
- Voltage - Forward (Vf) (Max) @ If :
- 810mV @ 10A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Peak Reverse Current :
- 20μA
- Qualification Status :
- Not Qualified
- Peak Non-Repetitive Surge Current :
- 100A
- Max Forward Surge Current (Ifsm) :
- 100A
- Factory Lead Time :
- 22 Weeks
- Max Operating Temperature :
- 150°C
- Reach Compliance Code :
- Unknown
- Mount :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 2
- Packaging :
- Tube
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Max Repetitive Reverse Voltage (Vrrm) :
- 80V
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction :
- 150°C Max
- Datasheets
- VBT2080C-E3/4W

Schottky Rectifier Diode 1 Pair Common Cathode Fast Recovery =< 500ns, > 200mA (Io) 150°C Max 10A 80V-DC 2-Element TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount
VBT2080C-E3/4W Description
VBT2080C-E3/4W Dual Trench MOS Barrier Schottky Rectifier. The Schottky diode, also known as the Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
VBT2080C-E3/4W Features
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High-efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106
VBT2080C-E3/4W Applications
High-frequency converters
Switching power supplies
Freewheeling diodes
OR-ing diode
DC/DC converters
Reverse battery protection
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