UMT4403U3T106

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Mfr.Part #
UMT4403U3T106
Manufacturer
ROHM Semiconductor
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS PNP 40V 0.6A UMT3
Stock
2,970
In Stock :
2,970

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Polarity/Channel Type :
PNP
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Voltage - Collector Emitter Breakdown (Max) :
40V
Terminal Form :
Gull wing
Package / Case :
SC-70, SOT-323
Surface Mount :
yes
Power - Max :
200mW
Vce Saturation (Max) @ Ib, Ic :
750mV @ 50mA, 500mA
Transition Frequency :
200MHz
Operating Temperature :
150°C TJ
Transistor Element Material :
SILICON
JESD-30 Code :
R-PDSO-G3
Configuration :
Single
Packaging :
Tape and Reel (TR)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Dual
Frequency - Transition :
200MHz
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Surface Mount
Current - Collector (Ic) (Max) :
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 1V
Number of Terminations :
3
Transistor Application :
SWITCHING
Turn Off Time-Max (toff) :
255ns
Transistor Type :
PNP
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
13 Weeks
Turn On Time-Max (ton) :
35ns
Datasheets
UMT4403U3T106
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor UMT4403U3T106 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-70, SOT-323, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, UMT4403U3T106 pinout, UMT4403U3T106 datasheet PDF, UMT4403U3T106 amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor UMT4403U3T106 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor UMT4403U3T106


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount

UMT4403U3T106 Overview


In this device, the DC current gain is 100 @ 150mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.200MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 40V.

UMT4403U3T106 Features


the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
a transition frequency of 200MHz


UMT4403U3T106 Applications


There are a lot of ROHM Semiconductor
UMT4403U3T106 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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