UM6606A

Manufacturer :

Microchip Technology

Product Category :

Diodes - RF

Power Dissipation (Max) :

6 W

Diode Element Material :

SILICON

Voltage - Peak Reverse (Max) :

800V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Element Configuration :

Single

Number of Pins :

2

Series :

-

ECCN Code :

EAR99

Resistance @ If, F :

2.5Ohm @ 100mA, 100MHz

Diode Capacitance-Nom :

0.4 pF

Radiation Hardening :

No

Configuration :

Single

Terminal Position :

END

Qualification Status :

Not Qualified

JESD-30 Code :

O-XEMW-N2

Number of Terminals :

2

Mount :

Surface Mount

Surface Mount :

yes

Minority Carrier Lifetime-Nom :

1 μs

Package / Case :

Axial

RoHS :

Compliant

Terminal Finish :

TIN LEAD

Product Status :

Active

Reverse Test Voltage :

100 V

Supplier Device Package :

Axial

Diode Capacitance-Max :

0.4 pF

Packaging :

Bulk

Diode Res Test Frequency :

100 MHz

Application :

ATTENUATOR; SWITCHING

Max Power Dissipation :

6 W

Operating Temperature :

-

Pbfree Code :

No

HTS Code :

8541.10.00.80

Breakdown Voltage-Min :

600 V

Package :

Tape and Reel (TR)

Terminal Form :

NO LEAD

Diode Type :

PIN DIODE

Power Dissipation-Max :

6 W

Capacitance @ Vr, F :

0.4pF @ 100V, 1MHz

Package Shape :

Round

Reach Compliance Code :

Unknown

Diode Forward Resistance-Max :

2.5 Ω

Frequency Band :

ULTRA HIGH FREQUENCY

Diode Res Test Current :

100 mA

JESD-609 Code :

e0