TSC873CT A3G
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- Mfr.Part #
- TSC873CT A3G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO92
- Stock
- 2,165
- In Stock ：
- 2,165
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 250mA, 1A
- Current - Collector (Ic) (Max) :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1mA
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 250mA 10V
- Supplier Device Package :
- TO-92
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Datasheets
- TSC873CT A3G
NPN -55°C~150°C TJ 1mA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
TSC873CT A3G Overview
In this device, the DC current gain is 80 @ 250mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 250mA, 1A.Supplier device package TO-92 comes with the product.The device exhibits a collector-emitter breakdown at 400V.
TSC873CT A3G Features
the DC current gain for this device is 80 @ 250mA 10V
the vce saturation(Max) is 1V @ 250mA, 1A
the supplier device package of TO-92
TSC873CT A3G Applications
There are a lot of Taiwan Semiconductor Corporation
TSC873CT A3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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