TS13002ACT B0G
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- Mfr.Part #
- TS13002ACT B0G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A TO92
- Stock
- 37,860
- In Stock ：
- 37,860
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-92
- Power - Max :
- 600mW
- Current - Collector Cutoff (Max) :
- 1μA
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 100mA 10V
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 20mA, 200mA
- Frequency - Transition :
- 4MHz
- Packaging :
- Bulk
- Factory Lead Time :
- 32 Weeks
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- TS13002ACT B0G
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NPN 150°C TJ 1μA TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
TS13002ACT B0G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 100mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 20mA, 200mA.The product comes in the supplier device package of TO-92.A 400V maximal voltage - Collector Emitter Breakdown is present in the device.
TS13002ACT B0G Features
the DC current gain for this device is 25 @ 100mA 10V
the vce saturation(Max) is 1.5V @ 20mA, 200mA
the supplier device package of TO-92
TS13002ACT B0G Applications
There are a lot of Taiwan Semiconductor Corporation
TS13002ACT B0G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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