TRS8E65C,S1Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Diodes - Rectifiers - Single

Voltage - Forward (Vf) (Max) @ If :

1.7V @ 8A

Mount :

Through Hole

Voltage - DC Reverse (Vr) (Max) :

650V

Number of Pins :

2

Min Operating Temperature :

-55°C

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Max Repetitive Reverse Voltage (Vrrm) :

650V

Published :

2014

Speed :

No Recovery Time > 500mA (Io)

Forward Current :

8A

Max Forward Surge Current (Ifsm) :

40A

Supplier Device Package :

TO-220-2L

Radiation Hardening :

No

Max Reverse Voltage (DC) :

650V

Reverse Recovery Time :

0ns

Current - Reverse Leakage @ Vr :

90μA @ 650V

Element Configuration :

Single

Operating Temperature - Junction :

175°C Max

Packaging :

Tube

Peak Non-Repetitive Surge Current :

40A

Diode Type :

Silicon Carbide Schottky

Average Rectified Current :

8A

Package / Case :

TO-220-2

Weight :

6.000006g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

175°C

Current - Average Rectified (Io) :

8A DC

Forward Voltage :

1.7V

Capacitance @ Vr, F :

44pF @ 650V 1MHz

Peak Reverse Current :

90μA

Factory Lead Time :

12 Weeks