TRS6E65F,S1Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Diodes - Rectifiers - Single

Operating Temperature - Junction :

175°C (Max)

PCB changed :

2

Series :

-

Voltage - Forward (Vf) (Max) @ If :

1.6 V @ 6 A

Product Category :

Schottky Diodes and Rectifiers

Product Type :

Schottky Diodes and Rectifiers

Type :

Schottky Diode

Peak Non-Repetitive Surge Current (A) :

55

Package :

Tube

Voltage - DC Reverse (Vr) (Max) :

650 V

Material :

SiC

Package Length :

10.05

Mounting :

Through Hole

Military :

No

Technology :

SiC

Maximum Operating Temperature (°C) :

175

Packaging :

Tube

Mounting Type :

Through Hole

Supplier Device Package :

TO-220-2L

Peak Forward Voltage (V) :

1.6

Peak Reverse Current (uA) :

30

ECCN (US) :

EAR99

Configuration :

Single

Supplier Package :

TO-220

Manufacturer :

Toshiba

Brand :

Toshiba

Subcategory :

Diodes and Rectifiers

Current - Reverse Leakage @ Vr :

30 µA @ 650 V

RoHS Status :

RoHS Compliant

Peak Reverse Repetitive Voltage (V) :

650

Mounting Style :

Through Hole

Minimum Operating Temperature (°C) :

-55

Vf - Forward Voltage :

1.45 V

Package Width :

4.45

Capacitance @ Vr, F :

22pF @ 650V, 1MHz

Speed :

No Recovery Time > 500mA (Io)

Product :

Schottky Silicon Carbide Diodes

Pin Count :

2

Product Status :

Active

Maximum Continuous Forward Current (A) :

6

Current - Average Rectified (Io) :

6A

RoHS :

Details

Reverse Recovery Time (trr) :

0 ns

Diode Type :

Silicon Carbide Schottky

Package Height :

9.08

Package / Case :

TO-220-2

Base Product Number :

TRS6E65

Maximum Operating Temperature :

+ 175 C