TRS2E65F,S1Q
- Mfr.Part #
- TRS2E65F,S1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220F-2L
- Datasheet
- Download
- Description
- PB-F DIODE TO-220-2L IF=2A VRRM=
- Stock
- 32,786
- In Stock :
- 32,786
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Diodes - Rectifiers - Single
- Configuration :
- Single
- Diode Type :
- Silicon Carbide Schottky
- Brand :
- Toshiba
- Supplier Device Package :
- TO-220-2L
- Military :
- No
- Base Product Number :
- TRS2E65
- Package / Case :
- TO-220F-2L
- Maximum Continuous Forward Current (A) :
- 2
- Material :
- SiC
- ECCN (US) :
- EAR99
- Product Category :
- Schottky Diodes and Rectifiers
- RoHS Status :
- RoHS Compliant
- Voltage - Forward (Vf) (Max) @ If :
- 1.6 V @ 2 A
- Type :
- Schottky Diode
- RoHS :
- Details
- Package Height :
- 9.08
- Maximum Operating Temperature (°C) :
- 175
- Peak Non-Repetitive Surge Current (A) :
- 21
- PCB changed :
- 2
- Pin Count :
- 2
- Product Type :
- Schottky Diodes and Rectifiers
- Minimum Operating Temperature :
- -
- Series :
- -
- Peak Forward Voltage (V) :
- 1.6
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- 175°C (Max)
- Package Length :
- 10.05
- Peak Reverse Repetitive Voltage (V) :
- 650
- Reverse Recovery Time (trr) :
- 0 ns
- Peak Reverse Current (uA) :
- 20
- Technology :
- SiC
- Current - Average Rectified (Io) :
- 2A
- Speed :
- No Recovery Time > 500mA (Io)
- Minimum Operating Temperature (°C) :
- -55
- Vf - Forward Voltage :
- 1.45 V
- Capacitance @ Vr, F :
- 8.7pF @ 650V, 1MHz
- Manufacturer :
- Toshiba
- Subcategory :
- Diodes and Rectifiers
- Current - Reverse Leakage @ Vr :
- 20 µA @ 650 V
- Supplier Package :
- TO-220
- Product Status :
- Active
- Package :
- Tube
- Maximum Operating Temperature :
- + 175 C
- Mounting Style :
- Through Hole
- Package Width :
- 4.45
- Product :
- Schottky Silicon Carbide Diodes
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Packaging :
- Tube
- Mounting :
- Through Hole
- Datasheets
- TRS2E65F,S1Q

Silicon Carbide Schottky 8.7pF @ 650V, 1MHz Tube TO-220F-2L
TRS2E65F,S1Q Overview
Datasheets indicate 1.6 as the peak forward voltage.RF diode consumes about 2 continuous forward current at any given time.
TRS2E65F,S1Q Features
the forward peak voltage is 1.6
TRS2E65F,S1Q Applications
There are a lot of Toshiba
TRS2E65F,S1Q applications of RF diodes.
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
- Set top boxes
- RF attenuators and switches
- Low-loss, high-power limiters
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