TRS12E65F,S1Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Diodes - Rectifiers - Single

Brand :

Toshiba

Product Status :

Active

Minimum Operating Temperature :

-

Product Category :

Schottky Diodes and Rectifiers

Military :

No

Package Height :

9.08

RoHS Status :

RoHS Compliant

Capacitance @ Vr, F :

65pF @ 650V, 1MHz

Operating Temperature - Junction :

175°C (Max)

Packaging :

Tube

Type :

Schottky Diode

Technology :

SiC

Manufacturer :

Toshiba

Product :

Schottky Silicon Carbide Diodes

Maximum Operating Temperature (°C) :

175

Mounting :

Through Hole

Peak Reverse Repetitive Voltage (V) :

650

Configuration :

Single

Supplier Device Package :

TO-220-2L

Vf - Forward Voltage :

1.45 V

Material :

SiC

Minimum Operating Temperature (°C) :

-55

Series :

-

Package :

Tube

Maximum Continuous Forward Current (A) :

12

PCB changed :

2

Package Width :

4.45

Current - Reverse Leakage @ Vr :

90 µA @ 650 V

Package Length :

10.05

RoHS :

Details

Tab :

Tab

Peak Reverse Current (uA) :

60

Mounting Style :

Through Hole

Peak Forward Voltage (V) :

1.6

Speed :

No Recovery Time > 500mA (Io)

Diode Type :

Silicon Carbide Schottky

Pin Count :

2

Current - Average Rectified (Io) :

12A

Subcategory :

Diodes and Rectifiers

Voltage - DC Reverse (Vr) (Max) :

650 V

Product Type :

Schottky Diodes and Rectifiers

Supplier Package :

TO-220

ECCN (US) :

EAR99

Voltage - Forward (Vf) (Max) @ If :

1.7 V @ 12 A

Maximum Power Dissipation (mW) :

115000

Peak Non-Repetitive Surge Current (A) :

97

Base Product Number :

TRS12E65

Maximum Operating Temperature :

+ 175 C

Reverse Recovery Time (trr) :

0 ns

Package / Case :

TO-220F-2L

Mounting Type :

Through Hole