TRS10E65F,S1Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Diodes - Rectifiers - Single

Maximum Operating Temperature (°C) :

175

ECCN (US) :

EAR99

Type :

Schottky Diode

Operating Temperature - Junction :

175°C (Max)

Configuration :

Single

Product :

Schottky Silicon Carbide Diodes

Diode Type :

Silicon Carbide Schottky

Base Product Number :

TRS10E65

Voltage - DC Reverse (Vr) (Max) :

650 V

Peak Reverse Current (uA) :

50

Current - Reverse Leakage @ Vr :

50 µA @ 650 V

Series :

-

Product Status :

Active

RoHS :

Details

Subcategory :

Diodes and Rectifiers

Pin Count :

2

Maximum Continuous Forward Current (A) :

10

Capacitance @ Vr, F :

36pF @ 650V, 1MHz

Current - Average Rectified (Io) :

10A

Package / Case :

TO-220F-2L

Packaging :

Tube

Mounting :

Through Hole

Mounting Type :

Through Hole

Peak Reverse Repetitive Voltage (V) :

650

Minimum Operating Temperature (°C) :

-55

Voltage - Forward (Vf) (Max) @ If :

1.6 V @ 10 A

PCB changed :

2

Technology :

SiC

Maximum Operating Temperature :

+ 175 C

Peak Non-Repetitive Surge Current (A) :

83

Material :

SiC

Mounting Style :

Through Hole

Minimum Operating Temperature :

-

Speed :

No Recovery Time > 500mA (Io)

Package Height :

9.08

Package :

Tube

Supplier Device Package :

TO-220-2L

Peak Forward Voltage (V) :

1.6

Package Length :

10.05

Brand :

Toshiba

Product Category :

Schottky Diodes and Rectifiers

Military :

No

Vf - Forward Voltage :

1.45 V

Manufacturer :

Toshiba

Package Width :

4.45

Product Type :

Schottky Diodes and Rectifiers

Supplier Package :

TO-220

RoHS Status :

RoHS Compliant

Reverse Recovery Time (trr) :

0 ns