TRD236DT4

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Mfr.Part #
TRD236DT4
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 400V 4A DPAK
Stock
15,567
In Stock :
15,567

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
1.3V @ 600mA, 2.5A
Max Collector Current :
4A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector Cutoff (Max) :
250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
2
Number of Elements :
1
Mount :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2.5A 5V
Transistor Type :
NPN
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
hFE Min :
8
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Max Breakdown Voltage :
400V
Collector Emitter Voltage (VCEO) :
1.3V
Polarity/Channel Type :
NPN
Operating Temperature :
150°C TJ
Element Configuration :
Single
RoHS Status :
RoHS Compliant
Transistor Element Material :
SILICON
Max Power Dissipation :
35W
Power - Max :
35W
Emitter Base Voltage (VEBO) :
9V
Base Part Number :
TRD236
Collector Emitter Breakdown Voltage :
400V
Datasheets
TRD236DT4
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics TRD236DT4 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Base Part Number:TRD236, TRD236DT4 pinout, TRD236DT4 datasheet PDF, TRD236DT4 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics TRD236DT4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics TRD236DT4


NPN 150°C TJ 250μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

TRD236DT4 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8 @ 2.5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.3V @ 600mA, 2.5A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 4A volts at its maximum.

TRD236DT4 Features


the DC current gain for this device is 8 @ 2.5A 5V
the vce saturation(Max) is 1.3V @ 600mA, 2.5A
the emitter base voltage is kept at 9V


TRD236DT4 Applications


There are a lot of STMicroelectronics
TRD236DT4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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