TPS2832DR
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- Mfr.Part #
- TPS2832DR
- Manufacturer
- Texas Instruments
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 7,372
- In Stock ：
- 7,372
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- Manufacturer :
- Texas Instruments
- Product Category :
- Gate Drivers
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Propagation Delay :
- 130 ns
- Output Peak Current Limit-Nom :
- 3.5A
- Number of Outputs :
- 2
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Length :
- 4.9mm
- High Side Driver :
- yes
- Terminal Position :
- Dual
- Turn On Delay Time :
- 130 ns
- Channel Type :
- SYNCHRONOUS
- Thickness :
- 1.58mm
- Gate Type :
- N-Channel MOSFET
- Nominal Supply Current :
- 3mA
- Voltage - Supply :
- 4.5V~15V
- Base Part Number :
- TPS2832
- Height :
- 1.75mm
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- JESD-609 Code :
- e4
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins :
- 8
- Pin Count :
- 8
- High Side Voltage - Max (Bootstrap) :
- 28V
- Fall Time (Typ) :
- 60 ns
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Max Output Current :
- 3.5A
- Power Dissipation :
- 600mW
- Driven Configuration :
- Half-Bridge
- Rise / Fall Time (Typ) :
- 50ns 50ns
- Output Current :
- 2.4A
- Factory Lead Time :
- 6 Weeks
- Operating Supply Voltage :
- 12V
- Input Type :
- Non-Inverting
- Input Characteristics :
- Standard
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -40°C~125°C TJ
- Width :
- 3.91mm
- Turn Off Time :
- 0.13 μs
- Weight :
- 75.891673mg
- Current - Peak Output (Source, Sink) :
- 2.7A 2.4A
- Max Power Dissipation :
- 600mW
- Power Supplies :
- 4.5/13V
- Number of Functions :
- 1
- Rise Time :
- 60ns
- Mounting Type :
- Surface Mount
- Supply Voltage :
- 6.5V
- Mount :
- Surface Mount
- Datasheets
- TPS2832DR
Gate Drivers Texas Instruments TPS2832DR Overview
Introducing the Texas Instruments TPS2832DR, a high-performance gate driver specifically designed for half-bridge power management applications. This compact and efficient component is housed in an 8-SOIC package, making it ideal for applications requiring high-density and low-power dissipation. The TPS2832DR is engineered to enhance the performance of your power management systems, offering precise gate driving capabilities that improve overall system reliability and efficiency. With its robust design and Texas Instruments' advanced technology, this gate driver is tailored for demanding environments where precise control and high efficiency are paramount.
TPS2832DR Features
The TPS2832DR boasts a series of features that make it a standout choice for driving power MOSFETs and IGBTs. It includes a dual-channel configuration which allows for independent control of the high-side and low-side drive channels, enhancing its versatility in various applications. The device offers up to 2A of peak output drive current, ensuring strong and fast switching capabilities. Its cross-conduction prevention logic minimizes efficiency losses and protects the integrity of power systems. Additionally, the low propagation delay and matched delay times improve the timing accuracy and overall system response.
TPS2832DR Applications
- Motor Control Systems: Utilized in brushless DC (BLDC), stepper, and servo motor drivers where precise control of the gate is essential for efficient motor operation.
- Power Supplies: Employed in switching power supplies including buck, boost, and multi-phase converters, where fast and reliable gate switching enhances power supply efficiency and regulation.
- Renewable Energy Systems: Used in inverters for solar and wind power applications, enabling efficient power conversion from DC to AC, thus maximizing the energy harnessing capability of renewable energy systems.
- Electric Vehicle Power Management: Integral in the drive systems of electric vehicles (EVs) and hybrid electric vehicles (HEVs), where it ensures high-efficiency power management and reliable operation of power electronics.
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