TN2907A_D26Z

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Mfr.Part #
TN2907A_D26Z
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Datasheet
Download
Description
TRANS PNP 60V 0.8A TO226
Stock
35,074
In Stock :
35,074

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
5V
Max Collector Current :
800mA
Current - Collector Cutoff (Max) :
10nA ICBO
Transistor Type :
PNP
Collector Emitter Saturation Voltage :
1.6V
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Weight :
250mg
Collector Emitter Breakdown Voltage :
60V
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
RoHS Status :
RoHS Compliant
Number of Pins :
3
Package / Case :
TO-226-3, TO-92-3 Long Body (Formed Leads)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
625mW
Collector Base Voltage (VCBO) :
60V
Element Configuration :
Single
hFE Min :
100
Number of Elements :
1
Power Dissipation :
625mW
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
60V
Datasheets
TN2907A_D26Z
Introducing Transistors - Bipolar (BJT) - Single onsemi TN2907A_D26Z from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type:Through Hole, TN2907A_D26Z pinout, TN2907A_D26Z datasheet PDF, TN2907A_D26Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TN2907A_D26Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TN2907A_D26Z


PNP -55°C~150°C TJ 10nA ICBO 1 Elements TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole

TN2907A_D26Z Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.

TN2907A_D26Z Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V


TN2907A_D26Z Applications


There are a lot of ON Semiconductor
TN2907A_D26Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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