TMBT3906,LM
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- Mfr.Part #
- TMBT3906,LM
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SOT23-3
- Stock
- 650
- In Stock ：
- 650
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 400mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- RoHS Status :
- RoHS Compliant
- Frequency - Transition :
- 250MHz
- Power - Max :
- 320mW
- Max Collector Current :
- 150mA
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 320mW
- Factory Lead Time :
- 12 Weeks
- Published :
- 2015
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Datasheets
- TMBT3906,LM
PNP 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
TMBT3906,LM Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
TMBT3906,LM Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
TMBT3906,LM Applications
There are a lot of Toshiba Semiconductor and Storage
TMBT3906,LM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TMBT3904,LM | Toshiba Electronic Devices and Storage Corporation | 4 | TRANS NPN 50V 0.15A SOT23-3 |
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