TIP50G
- Mfr.Part #
- TIP50G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO220
- Stock
- 146
- In Stock :
- 146
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Case Connection :
- COLLECTOR
- hFE Min :
- 30
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 400V
- Collector Emitter Voltage (VCEO) :
- 400V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Published :
- 1993
- Collector Emitter Saturation Voltage :
- 1V
- Base Part Number :
- TIP50
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Width :
- 4.82mm
- ECCN Code :
- EAR99
- Transition Frequency :
- 10MHz
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Power - Max :
- 2W
- Gain Bandwidth Product :
- 10MHz
- Voltage - Rated DC :
- 400V
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- -65°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1mA
- Length :
- 10.28mm
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 907.18474mg
- Max Power Dissipation :
- 40W
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 500V
- Power Dissipation :
- 40W
- Frequency :
- 10MHz
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Packaging :
- Tube
- Number of Pins :
- 3
- Current Rating :
- 1A
- Radiation Hardening :
- No
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Height :
- 9.28mm
- Surface Mount :
- No
- Datasheets
- TIP50G

NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
TIP50G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
TIP50G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
TIP50G Applications
There are a lot of ON Semiconductor
TIP50G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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