TIP32B
- Mfr.Part #
- TIP32B
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO220
- Stock
- 5,365
- In Stock :
- 5,365
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Voltage - Rated DC :
- -80V
- Collector Emitter Voltage (VCEO) :
- 80V
- hFE Min :
- 25
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 3MHz
- Published :
- 2005
- Frequency :
- 3MHz
- Pin Count :
- 3
- Length :
- 10.2616mm
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Base Part Number :
- TIP32
- Packaging :
- Tube
- Max Power Dissipation :
- 2W
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 3MHz
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -3A
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1.2V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Factory Lead Time :
- 2 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Width :
- 4.826mm
- Current - Collector Cutoff (Max) :
- 300μA
- Height :
- 15.748mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Weight :
- 4.535924g
- Surface Mount :
- No
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- TIP32B

PNP -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
TIP32BG Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In this part, there is a transition frequency of 3MHz.The maximum collector current is 3A volts.
TIP32BG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
TIP32BG Applications
There are a lot of ON Semiconductor
TIP32BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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