TIP31CG
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- Mfr.Part #
- TIP31CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO220
- Stock
- 14,051
- In Stock ：
- 14,051
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Width :
- 4.82mm
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- TIP31
- Collector Emitter Saturation Voltage :
- 1.2V
- Gain Bandwidth Product :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Pin Count :
- 3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 300μA
- Current Rating :
- 3A
- Contact Plating :
- Tin
- Height :
- 9.28mm
- Published :
- 2005
- Voltage - Rated DC :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- hFE Min :
- 25
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 100V
- JEDEC-95 Code :
- TO-220AB
- Transition Frequency :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Length :
- 10.28mm
- Frequency :
- 3MHz
- Surface Mount :
- No
- Max Collector Current :
- 3A
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 100V
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Datasheets
- TIP31CG
NPN -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
TIP31CG Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
TIP31CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
TIP31CG Applications
There are a lot of ON Semiconductor
TIP31CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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