TC58NYG1S3HBAI4

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Mfr.Part #
TC58NYG1S3HBAI4
Manufacturer
Kioxia America, Inc.
Package / Case
63-VFBGA
Datasheet
Download
Description
IC FLASH 2GBIT 63TFBGA
Stock
4,189
In Stock :
4,189

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Manufacturer :
Kioxia America, Inc.
Product Category :
Memory
Width :
9mm
Mounting Type :
Surface Mount
Surface Mount :
yes
RoHS Status :
RoHS Compliant
Write Cycle Time - Word, Page :
25ns
Supply Voltage-Max (Vsup) :
1.95V
Memory Size :
2Gb 256M x 8
JESD-30 Code :
R-PBGA-B63
Programming Voltage :
1.8V
Operating Temperature :
-40°C~85°C TA
Parallel/Serial :
Parallel
Memory Format :
Flash
Memory Type :
Non-Volatile
Supply Voltage :
1.8V
Number of Terminations :
63
Memory Width :
8
Height Seated (Max) :
1mm
Length :
11mm
Terminal Form :
Ball
Organization :
256MX8
Packaging :
Tray
Voltage - Supply :
1.7V~1.95V
Number of Functions :
1
Supply Voltage-Min (Vsup) :
1.7V
Terminal Position :
BOTTOM
Package / Case :
63-VFBGA
Terminal Pitch :
0.8mm
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Operating Mode :
ASYNCHRONOUS
Memory Density :
2147483648 bit
Datasheets
TC58NYG1S3HBAI4
Introducing Memory Kioxia America, Inc. TC58NYG1S3HBAI4 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-40°C~85°C TA, Number of Terminations:63, Package / Case:63-VFBGA, TC58NYG1S3HBAI4 pinout, TC58NYG1S3HBAI4 datasheet PDF, TC58NYG1S3HBAI4 amp .Beyond Memory Kioxia America, Inc. TC58NYG1S3HBAI4 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Kioxia America, Inc. TC58NYG1S3HBAI4


Memory Kioxia America, Inc. TC58NYG1S3HBAI4 Overview

The Memory Kioxia America, Inc. TC58NYG1S3HBAI4 is a cutting-edge integrated circuit tailored for high-demand data storage applications. Featuring a robust 2 Gbit capacity, this NAND flash memory is encapsulated in a compact 63TFBGA package, making it ideal for sophisticated electronic devices where space and efficiency are paramount. This product is specifically designed to meet the increasing demands of modern technology, offering a reliable storage solution that ensures data integrity and speed. Its integration capabilities make it an excellent choice for manufacturers looking to enhance product performance while maintaining cost-effectiveness.

TC58NYG1S3HBAI4 Features

This integrated circuit flash memory boasts a range of features designed to provide superior performance in various applications. Key features include a high-density 2 Gbit storage capacity, a compact 63TFBGA package for minimal footprint, and advanced durability under a range of operational environments. These characteristics make the TC58NYG1S3HBAI4 highly adaptable and reliable for demanding storage tasks.

TC58NYG1S3HBAI4 Applications

  • Smartphones and Tablets: Utilizes its high storage capacity and compact size to provide extended memory without compromising device sleekness and performance.
  • Wearable Technology: Ideal for devices requiring a combination of compact form factor and high data integrity, enhancing user experience with efficient performance.
  • Automotive Systems: Supports advanced automotive applications such as infotainment systems and advanced driver assistance systems (ADAS), where reliable and durable data storage is crucial.
  • Internet of Things (IoT) Devices: Empowers IoT devices with the ability to handle large amounts of data efficiently, supporting smarter solutions in home automation, industrial monitoring, and beyond.
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Shipping Method

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Shipping Cost

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