STX715
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- Mfr.Part #
- STX715
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.5A TO92-3
- Stock
- 27,401
- In Stock ：
- 27,401
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 140
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 50MHz
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 80V
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 140V
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Max Collector Current :
- 1.5A
- Power Dissipation :
- 900mW
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1mA
- Mount :
- Through Hole
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Frequency :
- 50MHz
- Max Power Dissipation :
- 900mW
- Collector Emitter Saturation Voltage :
- 500mV
- Gain Bandwidth Product :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- STX715
- Number of Elements :
- 1
- Current Rating :
- 1.5A
- Pbfree Code :
- yes
- Datasheets
- STX715
,TO-226_straightlead.jpg)
NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
STX715 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 1.5A volts.
STX715 Features
the DC current gain for this device is 40 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 50MHz
STX715 Applications
There are a lot of STMicroelectronics
STX715 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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