STK14CA8-NF25ITR

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Mfr.Part #
STK14CA8-NF25ITR
Manufacturer
Infineon Technologies
Package / Case
32-SOIC (0.295, 7.50mm Width)
Datasheet
Download
Description
IC NVSRAM 1MBIT PARALLEL 32SOIC
Stock
25,661
In Stock :
25,661

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Manufacturer :
Infineon Technologies
Product Category :
Memory
Reach Compliance Code :
Unknown
Supply Voltage :
3V
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
20
Length :
20.726mm
Number of Pins :
32
Organization :
128KX8
Memory Type :
Non-Volatile
Number of Terminations :
32
Memory Size :
1Mb 128K x 8
Nominal Supply Current :
70mA
Word Size :
8B
Mounting Type :
Surface Mount
Standby Current-Max :
0.003A
Voltage - Supply :
2.7V~3.6V
Write Cycle Time - Word, Page :
25ns
Supply Voltage-Max (Vsup) :
3.6V
Operating Mode :
ASYNCHRONOUS
Memory Format :
NVSRAM
Supply Voltage-Min (Vsup) :
2.7V
Operating Supply Voltage :
3.3V
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
260
Density :
1 Mb
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Data Bus Width :
8B
Published :
1996
Memory Interface :
Parallel
Number of Functions :
1
Operating Temperature :
-40°C~85°C TA
Pin Count :
32
Mount :
Surface Mount
Package / Case :
32-SOIC (0.295, 7.50mm Width)
Memory Width :
8
JESD-609 Code :
e3
RoHS Status :
Non-RoHS Compliant
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Height Seated (Max) :
2.54mm
Packaging :
Tape and Reel (TR)
Base Part Number :
STK14CA8
Terminal Pitch :
1.27mm
Access Time (Max) :
25 ns
Datasheets
STK14CA8-NF25ITR
Introducing Memory Infineon Technologies STK14CA8-NF25ITR from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:32, Number of Terminations:32, Mounting Type:Surface Mount, Operating Temperature:-40°C~85°C TA, Package / Case:32-SOIC (0.295, 7.50mm Width), Base Part Number:STK14CA8, STK14CA8-NF25ITR pinout, STK14CA8-NF25ITR datasheet PDF, STK14CA8-NF25ITR amp .Beyond Memory Infineon Technologies STK14CA8-NF25ITR ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies STK14CA8-NF25ITR


Memory Infineon Technologies STK14CA8-NF25ITR Overview

The Memory Infineon Technologies STK14CA8-NF25ITR is a cutting-edge Non-Volatile SRAM (NVSRAM) with a storage capacity of 1 Mbit, designed for high-speed, reliable data storage with minimal power consumption. This IC integrates all the benefits of SRAM and non-volatile memory to provide data security even after power loss, making it an ideal choice for critical data storage applications where data integrity is paramount. Encased in a compact 32SOIC package, this NVSRAM from Infineon Technologies offers parallel interface options, facilitating easy integration into existing architectures while minimizing development time and cost.

STK14CA8-NF25ITR Features

This NVSRAM unit boasts several key features that enhance its utility in demanding applications. These include instant non-volatility with no delay in write operations, high-speed data access comparable to standard SRAM, unlimited read and write cycles, and a robust operating temperature range. Additionally, the device is designed for low-power operation, which is critical for energy-sensitive applications.

STK14CA8-NF25ITR Applications

  • Industrial Automation: This NVSRAM can be used in complex automated systems where data integrity and speed are crucial, allowing for fault-tolerant and seamless process control.
  • Networking Equipment: Ideal for use in routers and switches, the STK14CA8-NF25ITR ensures quick access to configuration data, thus enhancing device responsiveness and reliability under varying network conditions.
  • Automotive Applications: In automotive electronics where data persistence and resilience are necessary, this memory can manage critical parameters for system functionality and safety.
  • Data Logging Systems: Perfect for environments where data must be preserved across power cycles, supporting fault diagnostics and operational analytics in fields like aerospace and scientific research.
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