ST2310DHI

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Mfr.Part #
ST2310DHI
Manufacturer
STMicroelectronics
Package / Case
ISOWATT-218-3
Datasheet
Download
Description
TRANS NPN 600V 12A ISOWATT-218
Stock
2,115
In Stock :
2,115

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
ISOWATT-218-3
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
3V @ 1.75A, 7A
Current Rating :
12A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
NPN
Number of Elements :
1
Packaging :
Tube
Lead Free :
Lead Free
Max Collector Current :
12A
Current - Collector Cutoff (Max) :
1mA
hFE Min :
5.5
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
3V
Continuous Collector Current :
12A
Collector Emitter Breakdown Voltage :
600V
Max Power Dissipation :
55W
Number of Terminations :
3
Operating Temperature :
150°C TJ
Qualification Status :
Not Qualified
Pin Count :
3
Emitter Base Voltage (VEBO) :
7V
Element Configuration :
Single
Transistor Type :
NPN
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
1.5kV
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
Base Part Number :
ST2310
Power Dissipation :
55W
DC Current Gain (hFE) (Min) @ Ic, Vce :
5.5 @ 7A 5V
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Voltage - Rated DC :
600V
Case Connection :
Isolated
Transistor Application :
SWITCHING
Datasheets
ST2310DHI
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics ST2310DHI from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOWATT-218-3, Number of Terminations:3, Operating Temperature:150°C TJ, Base Part Number:ST2310, Mounting Type:Through Hole, ST2310DHI pinout, ST2310DHI datasheet PDF, ST2310DHI amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics ST2310DHI ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics ST2310DHI


NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN ISOWATT-218-3 Tube Through Hole

ST2310DHI Overview


In this device, the DC current gain is 5.5 @ 7A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 1.75A, 7A.Maintaining the continuous collector voltage at 12A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (12A).Maximum collector currents can be below 12A volts.

ST2310DHI Features


the DC current gain for this device is 5.5 @ 7A 5V
the vce saturation(Max) is 3V @ 1.75A, 7A
the emitter base voltage is kept at 7V
the current rating of this device is 12A


ST2310DHI Applications


There are a lot of STMicroelectronics
ST2310DHI applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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