ST13003DN

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Mfr.Part #
ST13003DN
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 400V 1A SOT32-3
Stock
988
In Stock :
988

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
400V
Power Dissipation :
20W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Qualification Status :
Not Qualified
Mount :
Through Hole
Packaging :
Bulk
Max Collector Current :
1A
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 330mA, 1A
Operating Temperature :
150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Pin Count :
3
Terminal Finish :
Matte Tin (Sn)
ECCN Code :
EAR99
Package / Case :
TO-225AA, TO-126-3
Transistor Type :
NPN
Transistor Application :
SWITCHING
Element Configuration :
Single
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
hFE Min :
5
Max Power Dissipation :
20W
Number of Pins :
3
Base Part Number :
ST13003
Polarity/Channel Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 500mA 2V
Emitter Base Voltage (VEBO) :
9V
Collector Emitter Voltage (VCEO) :
1.2V
Reach Compliance Code :
not_compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
1mA
Datasheets
ST13003DN
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics ST13003DN from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Base Part Number:ST13003, Mounting Type:Through Hole, ST13003DN pinout, ST13003DN datasheet PDF, ST13003DN amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics ST13003DN ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics ST13003DN


NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

ST13003DN Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 6 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 330mA, 1A.The emitter base voltage can be kept at 9V for high efficiency.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

ST13003DN Features


the DC current gain for this device is 6 @ 500mA 2V
the vce saturation(Max) is 1.2V @ 330mA, 1A
the emitter base voltage is kept at 9V


ST13003DN Applications


There are a lot of STMicroelectronics
ST13003DN applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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