SST3906T116
- Mfr.Part #
- SST3906T116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SST3
- Stock
- 7,459
- In Stock :
- 7,459
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 50nA
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- -400mV
- Collector Emitter Breakdown Voltage :
- 40V
- Power - Max :
- 350mW
- Max Power Dissipation :
- 350mW
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- -40V
- Collector Emitter Voltage (VCEO) :
- 400mV
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 250MHz
- Max Collector Current :
- 200mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- HTS Code :
- 8541.21.00.75
- Collector-Base Capacitance-Max :
- 4pF
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Elements :
- 1
- Factory Lead Time :
- 13 Weeks
- hFE Min :
- 30
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Max Breakdown Voltage :
- 40V
- Base Part Number :
- T3906
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Pin Count :
- 3
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 250MHz
- Turn On Time-Max (ton) :
- 70ns
- Continuous Collector Current :
- -200mA
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SST3906T116

PNP 150°C TJ 50nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SST3906T116 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -200mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
SST3906T116 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
SST3906T116 Applications
There are a lot of ROHM Semiconductor
SST3906T116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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