SMSD602-RT1G
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- Mfr.Part #
- SMSD602-RT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A SC59
- Stock
- 2,735
- In Stock ：
- 2,735
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2012
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 600mV
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- Max Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Datasheets
- SMSD602-RT1G
NPN 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMSD602-RT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 30mA, 300mA.Collector current can be as low as 500mA volts at its maximum.
SMSD602-RT1G Features
the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
SMSD602-RT1G Applications
There are a lot of ON Semiconductor
SMSD602-RT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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