SMBT2222AE6327HTSA1
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- Mfr.Part #
- SMBT2222AE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23
- Stock
- 28,870
- In Stock ：
- 28,870
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 40V
- Configuration :
- Single
- hFE Min :
- 35
- Turn Off Time-Max (toff) :
- 285ns
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 300MHz
- Current Rating :
- 600mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 600mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 330mW
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Halogen Free :
- Not Halogen Free
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Published :
- 2002
- Transistor Element Material :
- SILICON
- Base Part Number :
- MBT2222A
- Collector Emitter Saturation Voltage :
- 300mV
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Voltage - Rated DC :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Power Dissipation :
- 330mW
- Height :
- 1.1mm
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Transition Frequency :
- 300MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Frequency :
- 300MHz
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 75V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Junction Temperature (Tj) :
- 150°C
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Terminal Form :
- Gull wing
- Datasheets
- SMBT2222AE6327HTSA1
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMBT2222AE6327HTSA1 Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
SMBT2222AE6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
SMBT2222AE6327HTSA1 Applications
There are a lot of Infineon Technologies
SMBT2222AE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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