SBCP56-16T1G
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- Mfr.Part #
- SBCP56-16T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 9,612
- In Stock ：
- 9,612
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 130MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.5W
- Published :
- 2005
- Pin Count :
- 4
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- Dual
- Length :
- 6.7mm
- Collector Emitter Saturation Voltage :
- 500mV
- Package / Case :
- TO-261-4, TO-261AA
- Factory Lead Time :
- 8 Weeks
- Surface Mount :
- yes
- Width :
- 3.7mm
- Max Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 100V
- hFE Min :
- 25
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Gain Bandwidth Product :
- 130MHz
- Number of Pins :
- 4
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Transition Frequency :
- 130MHz
- Base Part Number :
- BCP56
- Max Collector Current :
- 1A
- Series :
- Automotive, AEC-Q101
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Height :
- 1.65mm
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 4
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- SBCP56-16T1G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP56-16T1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
SBCP56-16T1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
SBCP56-16T1G Applications
There are a lot of ON Semiconductor
SBCP56-16T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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