SBCP56-10T1G
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- Mfr.Part #
- SBCP56-10T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 14,260
- In Stock ：
- 14,260
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BCP56
- Surface Mount :
- yes
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Max Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 500mV
- Published :
- 2005
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 130MHz
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1.5W
- Pin Count :
- 4
- Factory Lead Time :
- 8 Weeks
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 100V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Number of Pins :
- 4
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Power - Max :
- 1.5W
- Gain Bandwidth Product :
- 130MHz
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Datasheets
- SBCP56-10T1G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP56-10T1G Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 1A volts is possible.
SBCP56-10T1G Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
SBCP56-10T1G Applications
There are a lot of ON Semiconductor
SBCP56-10T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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